Design of High Performance Single-Port 5T SRAM Cell

In this paper, a novel single-port five-transistor (5T) Static Random Access Memory (SRAM) cell and associated read/write assist is proposed. Amongst them, a word line suppression circuit is to provide a voltage of the respective connected word line to be lower than the power supply voltage VDD, as such the read/writeability of the cell can be improved and the half-selected cells disturbance can be reduced. Furthermore, a voltage control circuit is coupled to the sources corresponding to the driver transistors of each row memory cells. This configuration is aimed to control the source voltages of driver transistors under different operating modes. In addition, a pre-charging circuit is design to pull up the bit line BL of a selected column to the voltage VDD before the read or write operation. Finally, with the standby start-up circuit design, the memory cell can rapidly switch to the standby mode, and thereby reduce leakage current in standby.